P6: CMOS-Optical-Integrated Multiple Sensing

The research project focuses on the integrated monolithic-optical multiple sensing in response to physical and electrochemical action. The sensing mechanisms to be determined cover two main combined actions: CMOS technology compatible capacitive and field-effect transistor structures and optical fiber microstructures. The research activity will begin with fundamental sensing principles by characterizing the device structures in response to physical and chemical information relating to tactile stimuli. For the transistor sensor, this involves investigating the integrated circuit device MOSFET and capacitive MEMS structure ability to act as sensors in detecting ions and physical changes such as humidity, temperature and pressure. For the optical fiber, light scattering effect of optical fiber microstructures in response to touch and force action, based on interferometry and intensity will be observed and analyzed. The next stage involves discovering techniques to capture the sensing response of the different areas. Electronics/photonics interfacing techniques will be assessed in capturing the sensor signals in terms of loss of information and sensitivity to allow optical fiber scattering phenomena to be detected and processed by common electronic systems. The third step will focus on interfacing of the effect of hybridization of microelectronics/photonics sensing. The research is expected to be able to characterize the effectiveness of the sensing modules in response to tactillity as well as electrochemical changes covering sensitivity, selectivity, repeatability, linearity, resolution and accuracy.