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P7: Sensing Behavior Of Memristive Metal Oxides

Project Leader

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. Dr. Sukreen Hana Herman
. Lecterur
. Faculty of Electrical Engineering
  Universiti Teknologi MARA (UiTM)
  Shah Alam, Selangor, 40450, Malaysia
. hana1617@salam.uitm.edu.my
. +603-55436041
Research Members

The project focuses on the deposition of memristive metal oxides and their characterizations focusing on tactile sensing behavior. Memristor, a fundamental circuit element that exhibits its unique properties primarily at the nanoscale. It is associated with memory elements due to the capability to memorize the resistance upon removal of applied bias. Memristor also was proposed in nano-bio sensing applications. Apart from biological and chemical sensors, memristors in physical sensors such as tactile sensors will open up wider functions in future electronic devices.

This work can be divided into two main phases. In the first phase, the sensing behavior of the memristive metal oxides, the active layer of the memristor, will be studied. On top of the response to chemical reaction or temperature, the changes of the memristive behavior in response to pressure and touch or substrate deformation will be investigated. We hypothesize that if the active layer of the memristor is deposited using piezoelectric materials that at the same time exhibit memristive behavior, tactile-sensing induced changes of the memristive behavior can be observed. Piezoelectric materials will be deposited on flexible substrates to test the tactility. Polymer flexible substrates have poor thermal resistance thus low-temperature process is the main challenge in this study. Deposition methods and parameters will be researched and optimized. The deposited thin layers will be tested for their memristive behavior and tactile sensing capability. The second phase of the work will be the integration of the memristive devices with the electronic interfacing circuits and systems to form a sensing module. The sensing module will be characterized for its sensitivity, selectivity, repeatability, linearity and accuracy.

Filters
Publication

 

 2016

 
Characterization of Zno/Tio2 Bilayer Film for Extended Gate Field-Effect Transistor (Egfet) Based Ph Sensor
urnal teknologi, Universiti Teknologi Malaysia
Access to document: http://doi.org/10.11113/jt.v78.8747

 
Metal Oxide Thin Films as Ph Sensing Membrane for Extended Gate Field Effect Transistor
Jurnal teknologi, Universiti Teknologi Malaysia
Access to document: https://jurnalteknologi.utm.my/index.php/jurnalteknologi/article/view/8770/5204


Modeling and Simulation of Titania Nanostructures Memristive Device
Jurnal teknologi, Universiti Teknologi Malaysia
Access to document: https://jurnalteknologi.utm.my/index.php/jurnalteknologi/article/view/8717/5180

 
Spin Speed and Duration Dependence of TiO2 Thin Films pH Sensing Behavior
Journal of Sensors, Volume 2016, Article ID 9746156, 8 pages
Access to document: http://dx.doi.org/10.1155/2016/9746156

 

2015

 
Annealing Time Dependence of Zinc Oxide Thin Films Memristive Behavior
Technology Management and Emerging Technologies (ISTMET), 2015 International Symposium on
Access to document: https://doi.org/10.1109/ISTMET.2015.7358992

 
Characterization of single and composites thin films memristive device  
Technology Management and Emerging Technologies (ISTMET), 2015 International Symposium on
Access to document: https://doi.org/10.1109/ISTMET.2015.7358996

 
Fabrication of Flexible Au/ZnO/ITO/PET Memristor Using Dilute Electrodeposition Method
IOP Conference Series: Materials Science and Engineering, Volume 99, conference 1
Access to document: http://iopscience.iop.org/article/10.1088/1757-899X/99/1/012002/pdf


Influence of Different Sol-gel Spin Coating Speed on Memristive Behaviour of Pt/TiO2/ZnO/ITO Device
IOP Conference Series: Materials Science and Engineering, Volume 99, conference 1
Access to document: http://iopscience.iop.org/article/10.1088/1757-899X/99/1/012020/pdf


Switching Behavior of Titania-Zinc Oxide Composites Thin Films
Material Science & Engineering
Access to document: https://doi.org/10.4028/www.scientific.net/AMM.749.308

 
The Effect of the Sol-gel Spincoating Deposition Technique on the Memristive Behaviour of ZnO-based Memristive Device
IOP Conference Series: Materials Science and Engineering, Volume 99, conference 1
Access to document: http://iopscience.iop.org/article/10.1088/1757-899X/99/1/012022/pdf

 
Integrated Readout Circuit Using Active Bridge for Resistive-Based Sensing
2015 IEEE International Symposium on Robotics and Intelligent Sensors (IEEE IRIS2015)
Access to document: https://doi.org/10.1016/j.procs.2015.12.284

 
Resistive-based Sensor System for Prosthetic Fingers Application 
2015 IEEE International Symposium on Robotics and Intelligent Sensors (IEEE IRIS2015)
Access to document: https://doi.org/10.1016/j.procs.2015.12.301

 

2014

 
Annealing temperature dependence of resistive switching behavior for sol-gel spin coated zinc oxide thin films
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Access to document: https://doi.org/10.1109/SMELEC.2014.6920895


Memristive Behavior of HF-Etched Sputtered titania Thin Films         
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Access to document: https://doi.org/10.1109/SMELEC.2014.6920837


Memristor in digital logic circuit: Fabrication and proof of concept
Research and Development (SCOReD), 2014 IEEE Student Conference on
Access to document: https://doi.org/10.1109/SCORED.2014.7072990


Switching behavior of lateral-structured zinc oxide-based memristive device
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Access to document: https://doi.org/10.1109/SMELEC.2014.6920894

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